mimix broadband?s 30 khz - 40 ghz gaas mmic distributed amplifier has a gain of 15 db with a 4.5 db noise figure at 26 ghz. this mmic uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for microwave, millimeter-wave, military, wideband and instrumentation applications. 30 khz - 40 ghz gaas mmic distributed amplifier absolute maximum ratings 1 page 1 of 10 features chip device layout 15 db gain 22.5 dbm p1db at 22 ghz 4.5 db noise figure at 26 ghz unconditional stability over temperature range 100% on-wafer rf, dc and output power testing 100% visual inspection to mil-std-883 method 2010 general description d1008-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. march 2009 - rev 19-mar-09 supply voltage (vd) supply current (id) gate bias voltage (vg1) gate current (ig1) gate bias voltage (vg2) gate current (ig2) cw input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +10.0v 340 ma +1 ma +4.0v 17 dbm +165 oc +150 oc -9.5v -38 ma -3.5v -20 ma -65 oc -55oc (1) absolute maximum ratings for continuous operation unless otherwise noted. parameters/conditions min. max. bias settings parameter drain current (id), v=7v, vg1=-2.5v*, vg2=open circuit drain current (id), v=4v, vg1=-2.5v*, vg2=open circuit drain voltage (vd) gate bias (vg1) gate bias (vg2) units ma ma v v v min. 4 typ. 200 160 7 max. function supply drain current to device adjusted to set drain current adjusted for gain control *approximate
30 khz - 40 ghz gaas mmic distributed amplifier page 2 of 10 (1) data measured in wafer form with backside temperature t = 25c unless otherwise noted. (2) 100% on-wafer rf test at 5, 25 and 40 ghz d1008-bd electrical characteristics for high power applications 1 vdd=7v, idd(q)=200 ma, zin=zo=50 parameter and test conditions small signal gain (s21) gain flatness ( s21) input return loss (s11) output return loss (s22) reverse isolation (s12) output power for 1 db compression (p1db) @ 22 ghz saturated rf power (psat) @ 22 ghz output 3rd order intercept point (oip3) @ 22 ghz nf noise figure (nf) @ 26 ghz nf noise figure (nf) @ 40 ghz units db db db db db dbm dbm dbm db db min. typ. 15 +/-0.75 16 16 28 22 24.5 27 4.5 6.5 max. electrical characteristics 1 vdd=6v, idd(q)=187 ma, zin=zo=50 parameter and test conditions small signal gain (s21) gain flatness ( s21) input return loss (s11) output return loss (s22) reverse isolation (s12) output power with 7 db input power (pout) output power for 1 db compression (p1db) @ 22 ghz saturated rf power (psat) @ 22 ghz output 3rd order intercept point (oip3) @ 22 ghz nf noise figure (nf) @ 26 ghz nf noise figure (nf) @ 40 ghz units db db db db db dbm dbm dbm dbm db db min. 14.0 2 20 2 typ. 15.5 +/-0.75 16 16 28 22 22.5 24.5 27 4.5 6.5 max. electrical characteristics for high gain, low noise applications 1 vdd=4v, idd(q)=160 ma, zin=zo=50 parameter and test conditions small signal gain (s21) gain flatness ( s21) input return loss (s11) output return loss (s22) reverse isolation (s12) output power for 1db compression (p1db) @ 22 ghz saturated rf power (psat) @ 22 ghz output 3rd order intercept point (oip3) @ 22 ghz nf noise figure (nf) @ 26 ghz nf noise figure (nf) @ 40 ghz units db db db db db dbm dbm dbm db db min. typ. 16 +/-0.75 16 16 28 18 22 30 3.5 5.5 max. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 3 of 10 d1008-bd distributed amplifier measurements xd1008-bd: s-parameters (db) blue = 7v_200ma , red = 4v_160ma , vg2 = open circuit -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) s-parameters (db) s2 s1 s1 s2 xd1008-bd: gain control (db) vs vg2a bias (v) vd = 4 v, freq = 5 to 40 ghz -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 vg2a (v) s21 (db) vd = 4 v, freq = 5 ghz vd = 4 v, freq = 10 ghz vd = 4 v, freq = 15 ghz vd = 4 v, freq = 20 ghz vd = 4 v, freq = 25 ghz vd = 4 v, freq = 30 ghz vd = 4 v, freq = 35 ghz vd = 4 v, freq = 40 ghz xd1008-bd: gain control (db) vs vg2a bias (v) vd = 7 v, freq = 5 to 40 ghz -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 vg2a (v) s21 (db) vd = 7 v, freq = 5 ghz vd = 7 v, freq = 10 ghz vd = 7 v, freq = 15 ghz vd = 7 v, freq = 20 ghz vd = 7 v, freq = 25 ghz vd = 7 v, freq = 30 ghz vd = 7 v, freq = 35 ghz vd = 7 v, freq = 40 ghz xd1008-bd: total drain current (ma) vs vg2a (v) red = 4 v , blue = 7 v 0 20 40 60 80 100 120 140 160 180 200 220 -2-1.5-1-0.500.511.522.53 vg2a voltage total drain current (ma) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. xd1008-bd s-parameters (db) at bias 7 v_200 ma, freq = 0 ghz - 70 ghz -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 frequency (ghz) s-parameters (db) xd1008-bd: noise figure (db) vs frequency (ghz) blue = 7v_200ma , red = 4v_160ma 0 1 2 3 4 5 6 7 8 9 10 3456789101112131415161718 frequency (ghz) nf (db) march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 4 of 10 d1008-bd distributed amplifier measurements (cont . ) xd1008-bd: noise figure (db) vs frequency (ghz) blue = 7v_200ma , red = 4v_160ma 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) nf (db) xd1008-bd: pout (dbm) vs. pin (dbm) rf = 1.5 to 18 ghz, vdd = 7 v, idd = 200 ma 8 10 12 14 16 18 20 22 24 26 -5 -3 -1 1 3 5 7 9 11 13 15 pin (dbm) pout (dbm) xd1008-bd: vdelta (v) vs. pout (dbm) freq = 1.5 to 18 ghz, vdd = 7.0 v, idd = 200 ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 9 10111213141516171819202122232425 pout (dbm) vdelta (v) vdelta, vdd v=7, freq ghz=1.5 vdelta, vdd v=7, freq ghz=6 vdelta, vdd v=7, freq ghz=10 vdelta, vdd v=7, freq ghz=14 vdelta, vdd v=7, freq ghz=18 xd1008-bd: pout (dbm) vs. pin (dbm) rf = 1.5 to 18 ghz, vdd = 4 v, idd = 160 ma 8 10 12 14 16 18 20 22 24 26 -5 -3 -1 1 3 5 7 9 11 13 15 pin (dbm) pout (dbm) xd1008-bd: vdelta (v) vs. pout (dbm) freq = 1.5 to 18 ghz, vdd = 4.0 v, idd = 160 ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 11 12 13 14 15 16 17 18 19 20 21 22 pout (dbm) vdelta (v) vdelta, vdd v=4, freq ghz=1.5 vdelta, vdd v=4, freq ghz=6 vdelta, vdd v=4, freq ghz=10 vdelta, vdd v=4, freq ghz=14 vdelta, vdd v=4, freq ghz=18 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. xd1008-bd: noise figure (db) vs frequency (ghz) blue = 7v_200ma , red = 4v_160ma 0 1 2 3 4 5 6 7 8 9 10 18 19 20 21 22 23 24 25 26 27 28 29 30 frequency (ghz) nf (db) march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 5 of 10 d1008-bd distributed amplifier measurements (cont . ) xd1008-bd: p1db (dbm) vs freq (ghz) 16 17 18 19 20 21 22 23 18 19 20 21 22 23 24 25 26 27 frequency (ghz) p1db (dbm) p1db, bias = 4v_160ma p1db, bias = 5v_174ma p1db, bias = 6v_187ma p1db, bias = 7v_200ma p1db, bias = 8v_214ma p1db, bias = 9v_227ma p1db, bias = 10v_240ma xd1008-bd: psat (dbm) vs freq (ghz) 20 21 22 23 24 25 26 27 18 19 20 21 22 23 24 25 26 27 frequency (ghz) psat (dbm) psat, bias = 4v_160ma psat, bias = 5v_174ma psat, bias = 6v_187ma psat, bias = 7v_200ma psat, bias = 8v_214ma psat, bias = 9v_227ma psat, bias = 10v_240ma mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. xd1008-bd: oip3 (dbm) vs freq (ghz) pin = 2 dbm, blue = 7v_200ma , red = 4v_160ma 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 freq (ghz) oip3 (dbm) xd1008-bd: output power at vd= 7v, id = 200ma, 26-40 ghz with pin -10 to +9 dbm 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 26 28 30 32 34 36 38 40 frequency (ghz) output power (dbm) xd1008-bd: output power vs input power. 26 - 40 ghz, vd = 7v, id = 200ma 8 10 12 14 16 18 20 22 24 26 -9 -7 -5 -3 -1 1 3 5 7 9 input power (dbm) pout (dbm) xd1008-bd: output power and gain vs input power. 26 - 40ghz, vd = 7v, id = 200ma 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -12-10-8-6-4-20246810 input power (dbm) output power (dbm) and gain (db) march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 6 of 10 d1008-bd biasing schematic app note [1] biasing - the detector diode can be used to measure output power over a broad bandwidth. the detector diode is biased through the pa drain supply and the output voltage is measured at vdet with a high imped- ance voltage measurement device. a reference diode is also included which may be used to compensate for tempera- ture and manufacturing process variation. the reference diode is biased through pin vdr with the same voltage as the pa drain supply and the voltage difference vdelta = vdet ? vref is used to measure output power with temperature and manufacturing process compensation. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. rfin vg2 vg3 vd vd aux vg1 rfout vdet vdr vref vg4 gnd nine identical stages march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 7 of 10 d1008-bd layout dimensions pin1 ? rf in pin2 ? vg2, not connected for basic application, but can be used for gain control (vg2 = 2v to -2v) pin3 ? vg3, not connected for basic application, can be used for gain peaking pin4 ? vd aux, not connected, but can be used for capacitive bypass for operation at frequencies lower than 2 ghz pin5 ? vd ? detector bias, the same as vd for the amplifier pin6 ? vdr ? bias voltage for reference diode (see application note) pin7 ? vdref ? detector reference (see application note) pin8 ? vdet ? detector diode (see application note) pin9 ? rfout pin10 ? vg4, not connected pin11 ? vg1, first gate bias typically bias at -2.5v to get -0.5v on the device. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 1 0 . 0 2 .3 5 0 .83 0 . 55 0 . 42 0 . 17 0 . 0 1 . 05 0 . 24 2 3 4 5 6 7 8 9 11 1 . 27 0 . 7 3 0 . 49 0 . 6 8 10 0 . 4 3 march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 8 of 10 d1008-bd bonding diagram mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. march 2009 - rev 19-mar-09
page 9 of 10 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. m tt f graphs these numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at mimix broadband. the values shown here are only to be used as a guideline against the end appli cation requirements and only represent reliability information under one bias condition. ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reli ability for a specific application, see previous pages. if the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. xd1008-bd: rth (c/w) vs. backside temp (c) vdd = 6.0 v, idd = 187 ma 0 5 10 15 20 25 30 35 40 20 30 40 50 60 70 80 90 100 110 120 backside temp (c) rth (c/w) rth xd1008-bd: mttf (hours) vs. backside temp (c) vdd = 6.0 v, idd = 187 ma 1.0e+06 1.0e+07 1.0e+08 1.0e+09 1.0e+10 1.0e+11 1.0e+12 1.0e+13 1.0e+14 1.0e+15 1.0e+16 1.0e+17 20 30 40 50 60 70 80 90 100 110 120 backside temp c mttf hours mttf xd1008-bd: tch_max (c) vs. backside temp (c) vdd = 6.0 v, idd = 187 ma 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 100 110 120 backside temp (c) tch_max (c) tch_max 30 khz - 40 ghz gaas mmic distributed amplifier d1008-bd march 2009 - rev 19-mar-09
30 khz - 40 ghz gaas mmic distributed amplifier page 10 of 10 d1008-bd handling and assembly information o rdering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, po wder, or liquid through burning, crushing, or chemical processing as thes e by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, appr oximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-t in eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310o c +/- 10o c. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters . bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description XD1008-BD-000V ?v? - vacuum release gel paks xd1008-bd-ev1 xd1008 die evaluation module note: physical die may be labeled xd9001. caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. march 2009 - rev 19-mar-09
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